IPDQ60R065S7XTMA1
Infineon Technologies
Deutsch
Artikelnummer: | IPDQ60R065S7XTMA1 |
---|---|
Hersteller / Marke: | Cypress Semiconductor (Infineon Technologies) |
Teil der Beschreibung.: | HIGH POWER_NEW PG-HDSOP-22 |
Datenblätte: | None |
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $9.01 |
10+ | $8.135 |
25+ | $7.7568 |
100+ | $6.7352 |
250+ | $6.4325 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 4.5V @ 490µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-HDSOP-22-1 |
Serie | CoolMOS™ |
Rds On (Max) @ Id, Vgs | 65mOhm @ 8A, 12V |
Verlustleistung (max) | 195W (Tc) |
Verpackung / Gehäuse | 22-PowerBSOP Module |
Paket | Tape & Reel (TR) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 1932 pF @ 300 V |
Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 12 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 12V |
Drain-Source-Spannung (Vdss) | 600 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 9A (Tc) |
Grundproduktnummer | IPDQ60R |
CA DSUB 09P M 1.0 PVC
HIGH POWER_NEW PG-HDSOP-22
HIGH POWER_NEW
HIGH POWER_NEW
RCPT DSUB 09P F SC
MOSFET
HIGH POWER_NEW PG-HDSOP-22
HIGH POWER_NEW
HIGH POWER_NEW
HIGH POWER_NEW PG-HDSOP-22
HIGH POWER_NEW PG-HDSOP-22
HIGH POWER_NEW PG-HDSOP-22
MOSFET
MOSFET
HIGH POWER_NEW
CA DSUB 09P F 1.0 PVC
HIGH POWER_NEW
HIGH POWER_NEW PG-HDSOP-22
HIGH POWER_NEW PG-HDSOP-22
MOSFET
2024/07/10
2024/04/13
2024/03/19
2024/06/6
IPDQ60R065S7XTMA1Infineon Technologies |
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